高深径比TSV填孔电镀技术

High Aspect Ratio TSV Electroplating Filling Technology

中文关键词: 硅穿孔  填孔电镀  添加剂  自底向上填充  空洞

英文关键词: through silicon via (TSV)  hole filling electroplating  additive  bottom-up filling  cavity

中文摘要:

      随着电子器件朝着小型化、多功能化、高功率密度方向发展，硅穿孔(Through Silicon Via，TSV)技术越来越受到业界的重视。填孔电镀技术是TSV的核心技术之一。文中探讨了填孔电镀的机理以及TSV电镀药水中各种添加剂对填充效果的影响，对比了国内外TSV电镀设备的现状，重点分析了TSV铜柱内空洞形成的原因和应对措施。分析认为导致空洞的主要原因有2个方面：一是电流聚集效应;二是物质(铜离子)的质量传输效应。在此基础上，实现了直径30 μm、深度210 μm的TSV无空洞填充，可为国内TSV技术的发展提供参考。

英文摘要:

      With the development of electronic devices towards miniaturization, multi-function and high power density, the through silicon via (TSV) technology has been paid more and more attention to by the electronic industry. The hole electroplating filling technology is one of the key technologies of TSV. The mechanism of hole electroplating filling and the influence of various additives on TSV filling are discussed in this paper. Meanwhile, the current situation of TSV plating equipment both at home and abroad is compared. The causes and solutions of cavity in TSV copper column are analyzed as an emphasis. It is concluded that there are two causes: current aggregation effect and the mass transfer effect. On this basis, TSV filling(without cavity)with a diameter of 30 μm and depth of 210 μm is realized, which can provide a reference for the development of domestic TSV technology.